Development of a 0.5 nm ultra-thin high-permittivity gate insulating film

URL

http://www.nanowerk.com/news/newsid=19901.php

Description

By focusing on the crystallization process of a high-permittivity material and incorporating a heat treatment that enables precise control of crystal growth, the researchers have developed the technology for the synthesis of high-permittivity crystalline films with no low-permittivity layer at the boundary with the substrate. When employed as MOS transistor gate insulating films, the high-permittivity crystalline films synthesized using this technology can achieve an equivalent silicon oxide (SiO2) thickness of 0.5 nm,